AE-6000C-type flexible shaft crystal growth furnace is to melt silicon semiconductor materials by graphite resistance heater in an inert gas environment, Using czochralski Technique dislocation-free crystal growth equipment, it can produce high quality single crystal which for solar photovoltaic devices.
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Main technical parameters
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Properties
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Model
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AE-85
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AE-95
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AE-120
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Diameter of Growth Tank (mm)
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850
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950
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1200
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Ingot diameter (inch)
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6 - 8
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8 - 10
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8-16
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Silica crucible size (inch)
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18-20
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22-24
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24-28
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Max charge amount (Kg)
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95
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150
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260
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Max crystal length (mm)
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2000
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2000
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2000
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Seed pulling rate（mm/Hr）
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0-508
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0-508
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0-508
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Seed Jog Speed (mm/Min)
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0-508
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0-508
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0-508
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Seed rotation rate (rpm)
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0-40
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0-40
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0-40
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Crucible Elevate Rate (mm/Hr)
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0-128
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0-128
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0-128
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Crucible Jog Speed (mm/Min)
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0-50.8
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0-50.8
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0-50.8
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Crucible rotation rate (rpm)
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0-20
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0-20
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0-20
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Crucible Travel stroke (mm)
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400
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420
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480
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Maximum weight for
crucible support (Kg)
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165
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230
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450
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Main line pump rate (SL/Sec)
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70
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70
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150
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Auxiliary pump rate (SL/Sec)
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8
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8
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8
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Ultimate pressure (Pa)
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less than 4
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less than 4
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less than 4
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Permissible leak rate (Pa/Hr)
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less than 6
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less than 6
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less than 6
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Gas flow control range (SL/Min)
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4-200
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4-200
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4-200
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Working pressure range (Pa)
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1500-5000
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1500-5000
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1500-5000
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AC power input (3 phase, 380V)
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140 KW
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200 KW
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250 KW
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Number of Heating Elements
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1
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2
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2
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Magnetic Coil
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Optional
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Optional
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Optional
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